BC337

BC337 SERIES SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC337 series devices are silicon NPN transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA ΘJC 50 45 5.0 800 625 -65 to +150 200 83.3 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICES VCE=45V ICBO VCB=30V IEBO VEB=4.0V BVCES IC=100μA 50 BVCEO IC=10mA 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=500mA, IB=50mA VBE(ON) VCE=1.0V, IC=300mA hFE VCE=1.0V, IC=100mA (BC337) 100 hFE VCE=1.0V, IC=100mA (BC337-16) 100 hFE VCE=1.0V, IC=100mA (BC337-25) 160 hFE VCE=1.0V, IC=100mA (BC337-40...