2N5172 NPN 2N6076 PNP
COMPLEMENTARY SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL S...
2N5172
NPN 2N6076
PNP
COMPLEMENTARY SILICON
TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5172 and 2N6076 are complementary silicon small signal
transistors designed for general purpose applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg
25 25 5.0 100 625 -65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICBO
VCB=25V
ICBO
VCB=25V, TA=100°C
ICES
VCE=25V
IEBO
VEB=5.0V (2N5172)
IEBO
VEB=3.0V (2N6076)
BVCEO
IC=10mA
25
VCE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=10mA, IB=1.0mA
VBE(ON)
VCE=10V, IC=10mA
0.5
hFE VCE=10V, IC=10mA
100
hfe
VCE=10V, IC=10mA, f=1.0kHz
100
fT VCB=5.0V, IC=2.0mA
200
Cob VCB=10V, IE=0, f=1.0MHz
1.0
MAX 100 10 100 100 10...
