JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
M28S TRANSISTOR (NPN)
SOT–23...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate
Transistors
M28S
TRANSISTOR (
NPN)
SOT–23
FEATURES Excellent hFE Linearity High DC Current Gain
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
20
VEBO Emitter-Base Voltage
6
IC Collector Current
1
PC Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj Junction Temperature Tstg Storage Temperature
150 -55～+150
Unit V V V A
mW ℃/W
℃ ℃
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=0.1mA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA, IC=0
Collector cut-off current
ICBO VCB=35V, IE=0
Collector cut-off current
ICEO VCE=20V, IB=0
Emitter cut-off c...
