M28S

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS M28S TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose "Speech Synthesizer" (Voice ROM) IC audio output driver stage amplifier applications. Pinning 3 = Emitter 1 = Collector 2 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Rating 40 20 6 1.25 0.4 850 +150 -55 to +150 Unit V V V A A mW oC oC TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) .500 (12.70) Min 2o Typ 2o Typ (1.0.2570)Typ .022(0.56) .014(0.36) .100 (2.54) Typ .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) .050 5oTyp. 5oTyp. (1.27)Typ Dimensions in inches and (millimeters) Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbo...