2SC2060 | BLUE ROCKET ELECTRONICS
Silicon NPN transistor
2SC2060
Rev.E Mar.-2016
DATA SHEET
/ Descriptions TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package.
/ Features
,, 2SA934 。 High PC, low collector saturation voltage, complementary pair with 2SA934.
/ Applications
1～2W 。 1～2W low frequency amplifiers.
/ Equivalent Circuit
/ Pinning
123
PIN1：Base
PIN 2：Collector
PIN 3：Emitter
/ hFE Classifications & Marking
hFE .
- 2SC2060 | BLUE ROCKET ELECTRONICS
- Silicon NPN transistor
- 2SC2060
Rev.E Mar.-2016
DATA SHEET
/ Descriptions TO-92LM NPN 。Silicon NPN transistor in a TO-9.
- 2SC2060
Rev.E Mar.-2016
DATA SHEET
/ Descriptions TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package.
/ Features
,, 2SA934 。 High PC, low collector saturation voltage, complementary pair with 2SA934.
/ Applications
1～2W 。 1～2W low frequency amplifiers.
/ Equivalent Circuit
/ Pinning
123
PIN1：Base
PIN 2：Collector
PIN 3：Emitter
/ hFE Classifications & Marking
hFE Classifications Symbol hFE Range
P 82～180
Q 120～.
- 2SC2060 | JCET
- NPN Transistor
- JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SC2060 T.
- JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SC2060 TRANSISTOR (NPN)
FEATURE z Power Dissipation PCM: 0.75 W (Ta=25℃) z Low Saturation Voltage (VCE(sat)=0.15V at 500mA) z Complementary Pair with 2SA934
TO-92L
1. EMITTER 2. COLLECTOR 3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-base voltage Collector-Emitter Voltage Emitter-Base Vo.
- 2SC2060 | Changjiang
- NPN Transistor
- TO-92MOD PLASTIC-ENCAPSULATE TRANSISTORS
2SC2060 TRANSISTOR (NPN)
FEATURES
Power dissipation PCM: .
- TO-92MOD PLASTIC-ENCAPSULATE TRANSISTORS
2SC2060 TRANSISTOR (NPN)
FEATURES
Power dissipation PCM: 0.75W (Tamb=25ºC) Collector Current ICM: 1A Collector-base voltage V
(BR) CBO
TO-92 MOD
1. EMITTER 2. COLLECTOR 3. BASE
: 40V
Operating and storage junction temperature range TJ, Tstg: -55ºC to + 150ºC
ELECTRICAL CHARACTERISTICS
(Tamb=25ºC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage.
- 2SC2060 | LZG
- SILICON NPN TRANSISTOR
- 2SC2060(3DG2060)
: 1～2W 。
NPN /SILICON NPN TRANSISTOR
Purpose:1～2W low frequency amplifiers.
:,,.
- 2SC2060(3DG2060)
: 1～2W 。
NPN /SILICON NPN TRANSISTOR
Purpose:1～2W low frequency amplifiers.
:,, 2SA934(3CG934)。
Features: High PC, low collector saturation voltage, complementary pair with 2SA934(3CG934).
/Absolute maximum ratings(Ta=25℃)
Symbol Rating Unit
VCBO VCEO VEBO IC ICP PC Tj Tstg
40 32 5.0 1.0 2.0 750 150 -55～150
V V V A A mW ℃ ℃
/Electrical characteristics(Ta=25℃)
Symbol
Test condition
Rating
Max Unit
Min
Typ
.
