Power Transistor
FEATURES
z Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)
z Complements the 2SB1184.
APPLICATIONS
z ...
Power
Transistor
FEATURES
z Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)
z Complements the 2SB1184.
APPLICATIONS
z Epitaxial planar type. z
NPN silicon
transistor.
Pb
Lead-free
Production specification
2SD1864
TO-251
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
60 V
VCEO
Collector-Emitter Voltage
50 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current(DC)
3A
ICP Collector Current(Pulse)
4.5 A
IB Base Current
1A
PC Collector Power Dissipation
1.5 W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
V040 Rev.A
www.gmicroelec.com 1
Production specification
Power
Transistor
2SD1864
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage
VCBO VCEO VEBO
IC=50uA,IE=0 IC=1mA,IB=0 IE=50uA,IC=0
60 50 ...
