2SB649A

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB649 2SB649A DESCRIPTION ·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage 2SB649 2SB649A Open emitter VCEO Collector-emitter voltage 2SB649 2SB649A Open base VEBO IC ICM PD Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Peak Total power dissipation Junction temperature Storage temperature Open collector Ta=25 TC=25 VALUE -180 -180 -120 -160 -5 -1.5 -3 1 20 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CE...