2SB649/2SB649A(PNP)
TO-126 Transistor
TO-126
1. EMITTER 2. COLLECTOR
7.400 7.800
2.500 1.100 2.900 1.500
Features
...
2SB649/2SB649A(
PNP)
TO-126
Transistor
TO-126
1. EMITTER 2. COLLECTOR
7.400 7.800
2.500 1.100 2.900 1.500
Features
3 2
1
3. BASE
Low frequency power amplifier complementary pair with 2SD669/A
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage 2SB649
-120
V
2SB649A
-160
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current –Continuous
-1.5
A
PC Collector Power Dissipation
1
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless
3.000 3.200 10.60 0 11.00 0
15.30 0 15.70 0
3.900 4.100
2.100 2.300 1.170 1.370
0.000 0.300
0.660 0.860 2.290 TYP 4.480 4.680
0.450 0.600
Dimensions in inches and (millimeters)
otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage Collector cut-of...
