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MJE243
Silicon NPN Power Transistor
Description
isc Silicon
NPN
Power
Transistor
MJE243 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 100 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·Complement to the
PNP
MJE253 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION...
Inchange Semiconductor
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