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MJE253 Dataheets PDF



Part Number MJE253
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistor
Datasheet MJE253 DatasheetMJE253 Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJE243 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJE243 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature -1 A 1.5 W 15 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MA X 8.34 UNIT ℃/W 83.4 ℃/W MJE253 isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJE253 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A ;IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -2A ;IB= -0.2A VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= -0.5A; VCE= -1V VCB= -100V; IE= 0 VCB= -100V; IE= 0;TC= 125℃ VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -0.2 A ; VCE= -1V 40 hFE-2 DC Current Gain IC= -1A ; VCE= -1V 15 fT Current-Gain—Bandwidth Product IC= -0.1 A; VCE= -10V; ftest = 10MHz 40 COB Collector Capacitance IE= 0; VCB= -10V; ftest = 0.1MHz 40 MAX -0.3 -0.6 -1.8 -1.5 -0.1 -0.1 -0.1 180 UNIT V V V V V μA mA μA MHz pF NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc Website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


MJE253 MJE253 TIP122L


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