2SC3502

isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 200 V ·Complement to Type 2SA1380 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ultrahigh-definition CRT display, video out- put applicaitons ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dssipation Ta=25℃ PC Collector Power Dssipation TC=25℃ Ti Junction Temperature 0.2 A 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3502 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3502 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ;IB= 2mA VBE(sat) Base-Emitter Saturation Voltage IC= 20mA ;IB= 2mA ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 10m A ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 30V; COB Collector Capacitance IE= 0; VCB= 30V;ftest = 1MHz...