JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
2SB776 TRANSISTOR (PNP)
TO ...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate
Transistors
2SB776
TRANSISTOR (
PNP)
TO – 126C
FEATURES
z High Current Output up to 3A z Low Collector-Emitter Saturation Voltage z Complement to 2SD886
1. EMITTER 2. COLLECTOR 3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value -50 -50 -5 -3 1 125 150
-55~+150
Unit V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC=-5mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,IC=0
Collector cut-off current
ICBO
VCB=-50V,IE=0
Emitter cut-off current...
