NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
FEATURES
z High DC Current Gain: hFE=140~600(VCE=2V,IC=0.5A)
Pb
Lead...
NPN SILICON EPITAXIAL
TRANSISTOR
POWER MINI MOLD
FEATURES
z High DC Current Gain: hFE=140~600(VCE=2V,IC=0.5A)
Pb
Lead-free
hFE=70(Min.) (VCE=2V,IC=4A)
z Low Saturation Voltage:VCE(sat)=1.0V(Max.)(IC=4A,IB=0.1A)
Production specification
2SC3420
APPLICATIONS
z STOROBO FLASH APPLICATION z MEDIUM POWER AMPLIFIER APPLICATIONS.
SOT-89
ORDERING INFORMATION
Type No.
Marking
2SC3420
3420
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO IC
Emitter-Base Voltage
Collector Current
DC Pulse
IB Base Current
PC Power Dissipation Tj Junction Temperature Tstg Storage Temperature
Value 50 20 8 5 8 1
Units V V V A
A
0.5 W 150 ℃ -55 to +150 ℃
E126 Rev.A
www.gmicroelec.com 1
Production specification
NPN SILICON EPITAXIAL
TRANSISTOR POWER MINI MOLD
2SC3420
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MA...
