JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SC3807 TRANSISTOR (NPN)
TO-...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate
Transistors
2SC3807
TRANSISTOR (
NPN)
TO-126
FEATURES z Low frequency power amplifier z Large current capacity z High DC current gain z Low collector-to-emitter saturation voltage z High VEBO
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Emitter Voltage
30 V
VCEO
Collector-Emitter Voltage
25 V
VEBO
Emitter-Base Voltage
15 V
IC Collector Current -Continuous 2 A
Pc Power dissipation
1.2 W
TJ Junction Temperature Tstg Storage Temperature
150 -55-150
℃ ℃
1. EMITTER 2. COLLECOTR 3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC =10μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC =1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=10μA ,IC=0
Collector cut-off current
ICBO
VCB=20V,IE=0
Emitter cut-off current
IEBO VEB=10...
