2SD1899

NPN Epitaxial Planar Silicon Transistors FEATURES z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2SD1899 ORDERING INFORMATION Type No. Marking 2SD1899 1899 SOT-89 Package Code SOT-89 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC ICP IB PC Collector-Base Volage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Base current Collector Power Dissipation Tj ,Tstg Junction and Storage temperature range Note1:Mounted on ceramic substrate(250mm2*0.8t) 60 60 7 3 5 0.5 0.5 1.3 Note1 -55 to +150 V V V A A A W ℃ E127 Rev.A www.gmicroelec.com 1 Production specification NPN Epitaxial Planar Silicon Transistors 2SD1899 ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage VCBO IC=10uA,IE=0 60 Collector-emitter bre...