BD436

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD434,436 TRANSISTOR (PNP) FEATURES Amplifier and Switching Applications TO-126 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BD434 BD436 -22 -32 V VCEO Collector-Emitter Voltage BD434 BD436 -22 -32 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature -5 -4 1.25 150 -55-150 V A W ℃ ℃ 1. EMITTER 2. COLLECOTR 3. BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency (1)Pulse test. Symbol V(BR)CBO Test conditions IC=-100μA,IE=0 BD434 BD436 VCEO(SUS)(1) IC...