BD439/441(NPN)
TO-126 Transistor
1. EMITTER
2. COLLECTOR
Features
3 2
1
Amplifier and switching applications
3. ...
BD439/441(
NPN)
TO-126
Transistor
1. EMITTER
2. COLLECTOR
Features
3 2
1
Amplifier and switching applications
3. BASE
MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
BD439 BD441
60 80
V
VCEO
Collector-Emitter Voltage BD439 BD441
60 80
V
VEBO
Emitter-Base Voltage
5V
IC Collector Current –Continuous
4A
PC Collector Power Dissipation
1.25 W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
3.000
3.200 10.60 0 11.00 0
TO-126
7.400 7.800
2.500 1.100 2.900 1.500
3.900 4.100
0.000 0.300
15.30 0 15.70 0
2.100 2.300
1.170 1.370
0.660 0.860 2.290 TYP 4.480 4.680
0.450 0.600
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage
Symbol V(BR)CBO
Test conditions IC=100μA,IE=0
MIN TYP MAX UNIT
BD439 BD441
60 80
V
Collector-emitter breakdown voltage Emitter-base breakdown volt...
