PNP Epitaxial Silicon Transistor
FEATURES
z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A.
z...
PNP Epitaxial Silicon
Transistor
FEATURES
z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A.
z DC Current Gain HFE=60-200@IC=0.5A.
z Complememtary to
PNP 2SD880.
Pb
Lead-free
Production specification
2SB834
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO VEBO IC IB PC Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
Base Current
Continuous Peak
Collector Dissipation
Junction and Storage Temperature
-60
-7 -3 -6 -0.5
1.5
-55 to +150
V V A A W ℃
X031 Rev.A
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Production specification
PNP Epitaxial Silicon
Transistor
2SB834
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN MAX UNIT
Collector-base Breakdown Voltage
V(BR)CBO IC=-1mA,IE=0
-60
V
Collector-emitter Breakdown Voltage
V(BR)CEO IC=-50mA,IB=0
-60
V...