2N6439
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N6439 is a Common Emitter Device Designed For Large signal...
2N6439
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI 2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range.
FEATURES INCLUDE:
Internal Input Matching Network 30:1 Load VSWR Capability All Gold Metalization
MAXIMUM RATINGS
VCB 60 V
PDISS
146 W @ TC = 25 °C
TSTG θJC
-65 °C to +200 °C 1.2 °C/W
PACKAGE STYLE .500 6L FLG
1 = Collector 2 = Base 3 & 4 = Emitter
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM
BVCBO
IC = 50 mA
33
BVCES
IC = 50 mA
60
BVCBO
IE = 5.0 mA
4.0
hFE VCE = 5.0 V IC = 1.0 A
10
COB
VCB = 28 V
f = 1 MHz
GPe
VCE = 28 V
POUT = 60 W
f =225- 400 MHz 7.8
GPe 7.8
ηC
VCE = 28 V
POUT = 60 W
f = 400 MHz
55
Ψ 30:1
TYPICAL MAXIMUM
100 67 75 8.5 10.0
UNITS
V V V --pF
dB % ---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change witho...
