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DU28120T

RF Power MOSFET Transistor

Description

DU28120T RF Power MOSFET Transistor 120 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant Package Outline Rev. V1 ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source V...

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