DU28120V

DU28120V RF Power MOSFET Transistor 120 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant Package Outline Rev. V1 ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage VDS 65 Gate-Source Voltage Drain-Source Current VGS IDS 20 12 Power Dissipation PD 250 Junction Temperature Storage Temperature TJ TSTG 200 -55 to +150 Thermal Resistance θJC 0.7 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) 30 ZIN (Ω) 3.0 - j12.5 ZLOAD (Ω) 8.0 + j6.0 50 1.5 - j8.5 7.0 +j6.5 100 1.0 - j6.0 6.5 + j5.0 VDD = 28V, IDQ = 600mA, POUT = 120 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Drai...