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DU2840S Dataheets PDF



Part Number DU2840S
Manufacturers MA-COM
Logo MA-COM
Description RF Power MOSFET Transistor
Datasheet DU2840S DatasheetDU2840S Datasheet (PDF)

DU2840S RF Power MOSFET Transistor 40 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant Package Outline Rev. V1 ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD.

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DU2840S RF Power MOSFET Transistor 40 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant Package Outline Rev. V1 ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 8 125 200 -55 to +150 1.4 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) 30 ZIN (Ω) 12.0 - j6.8 ZLOAD (Ω) 6.5 - j1.5 50 10.0 - j6.5 6.0 - j1.8 100 6.0 - j5.5 5.5 - j1.8 200 1.1 - j3.0 3.5 - j1.8 VDD = 28V, IDQ = 200mA, POUT = 40 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. LETTER DIM A B C D E F G H J K L .


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