Dual In-Series Small-Signal High-Voltage Switching Diode
GSD2004S-V
Vishay Semiconductors
Dual In-Series Small-Signal High-Voltage Switching Diode
Features
• Silicon Epitaxial ...
Description
GSD2004S-V
Vishay Semiconductors
Dual In-Series Small-Signal High-Voltage Switching Diode
Features
Silicon Epitaxial Planar Diode Fast switching dual in-series diode,
especially suited for applications requiring high voltage capability AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOT-23 Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
2 1
3
12 3
18545
Parts Table
Part GSD2004S-V
Ordering code GSD2004S-V-GS18 or GSD2004S-V-GS08
Marking DB6
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Peak repetitive reverse voltage
Forward current (continuous)
Peak repetitive forward current
Non-repetitive peak forward current
tp = 1 μs tp = 1 s
Power dissipation
1) Device on Fiberglass Substrate, see layout on second page
Symbol VR
V...
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