LF2802A

LF2802A RF Power MOSFET Transistor 2 W, 500 - 1000 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor  Applications Broadband linear operation 500 MHz to 1400 MHz  RoHS Compliant Absolute Maximum Ratings @ 25°C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 0.7 8 200 -55 to +150 21.8 Units V V A W °C °C °C/W Typical Device Impedance F (MHz) 500 ZIN (Ω) 10.0 - j41.5 ZLOAD (Ω) 40.0 +j53.0 1000 4.2 - j12.0 11.85 + j33.0 1400 3.5 - j1.0 7.5 + j23.3 VDD = 28V, IDQ = 25mA, POUT = 2.0 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. Package Outline Rev. V1 LETTER D...