V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trenc...
V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20100C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
D2PAK (TO-263AB) K
VF20100C
123
PIN 1
PIN 2
PIN 3
TO-262AA K
2 1
VB20100C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS
VI20100C
PIN 1
3 2 1
PIN 2
PIN 3
K
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Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Package
2 x 10 A 100 V 150 A 0.58 V 150 °C
TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
FEATURES
Trench MOS
Schottky technology Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB package) Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 °C maximum 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 ...
