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VS-15CTQ035S-M3 Dataheets PDF



Part Number VS-15CTQ035S-M3
Manufacturers Vishay
Logo Vishay
Description High Performance Schottky Rectifier
Datasheet VS-15CTQ035S-M3 DatasheetVS-15CTQ035S-M3 Datasheet (PDF)

www.vishay.com VS-15CTQ...S-M3, VS-15CTQ...-1-M3 Series Vishay Semiconductors High Performance Schottky Rectifier, 2 x 7.5 A 2 1 31 2 D2PAK (TO-263AB) 3 Base common cathode 2 TO-262AA Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-15CTQ...S-M3 2 1 Common 3 Anode cathode Anode VS-15CTQ...-1-M3 PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM max. TJ max. EAS Package 2 x 7.5 A 35 V, 40 V, 45 V 0.51 V 32 mA at 125 °C 150 °C 10 mJ D2PAK (TO-263AB), TO-262AA Circuit configurat.

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www.vishay.com VS-15CTQ...S-M3, VS-15CTQ...-1-M3 Series Vishay Semiconductors High Performance Schottky Rectifier, 2 x 7.5 A 2 1 31 2 D2PAK (TO-263AB) 3 Base common cathode 2 TO-262AA Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-15CTQ...S-M3 2 1 Common 3 Anode cathode Anode VS-15CTQ...-1-M3 PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM max. TJ max. EAS Package 2 x 7.5 A 35 V, 40 V, 45 V 0.51 V 32 mA at 125 °C 150 °C 10 mJ D2PAK (TO-263AB), TO-262AA Circuit configuration Common cathode FEATURES • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-15CTQ... center tap Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.      MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform Range tp = 5 μs sine 7.5 Apk, TJ = 125 °C (per leg) Range VALUES 15 35 to 45 810 0.51 -55 to +150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER SYMBOL VS-15CTQ035S-M3 VS-15CTQ035-1-M3 Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM 35 VS-15CTQ040S-M3 VS-15CTQ040-1-M3 40 VS-15CTQ045S-M3 VS-15CTQ045-1-M3 45 UNITS V Revision: 27-Oct-17 1 Document Number: 94926 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-15CTQ...S-M3, VS-15CTQ...-1-M3 Series Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS Repetitive avalanche current per leg IAR TEST CONDITIONS 50 % duty cycle at TC = 123 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated 10 ms sine or 6 ms rect. pulse VRRM applied TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical VALUES 15 810 145 10 1.5 UNITS A A mJ A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop per leg  See fig. 1 VFM (1) Maximum reverse leakage current per leg See fig. 2 Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) CT LS dV/dt TEST CONDITIONS 7.5 A 15 A TJ = 25 °C 7.5 A 15 A TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VR VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES 0.55 0.70 0.51 0.65 0.8 32 400 8.0 10 000 UNITS V mA pF nH V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case per leg Maximum thermal resistance,  junction to case per package RthJC DC operation See fig. 4 DC operation Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased Approximate weight Mounting torque minimum maximum Marking device Case style D2PAK (TO-263AB) Case style TO-262AA VALUES -55 to 150 UNITS °C 3.50 1.75 °C/W 0.50 2g 0.07 oz. 6 (5) 12 (10) kgf · cm (lbf · in) 15CTQ035S 15CTQ040S 15CTQ045S 15CTQ035-1 15CTQ040-1 15CTQ045-1 Revision: 27-Oct-17 2 Document Number: 94926 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IF - Instantaneous Forward Current (A) www.vishay.com VS-15CTQ...S-M3, VS-15CTQ...-1-M3 Series Vishay Semiconductors 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) 1000 IR - Reverse Current (mA) 100 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C TJ = 7.


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