www.vishay.com
VS-20CTQ...S-M3, VS-20CTQ...-1-M3 Series
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x...
www.vishay.com
VS-20CTQ...S-M3, VS-20CTQ...-1-M3 Series
Vishay Semiconductors
High Performance
Schottky Rectifier, 2 x 10 A
2 1
3
1
2
D2PAK (TO-263AB)
3
Base common cathode
2
TO-262AA
Base common cathode
2
2 1 Common 3 Anode cathode Anode
VS-20CTQ...S-M3
2 1 Common 3 Anode cathode Anode
VS-20CTQ...-1-M3
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF IRM TJ max. EAS Package
2 x 10 A 35 V, 40 V, 45 V
0.57 V 15 mA at 125 °C
175 °C 13 mJ D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
FEATURES 175 °C TJ operation Center tap configuration
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
Designed and qualified according to JEDEC®-JESD 47
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION The VS-20CTQ... center tap
Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM VF TJ
Rectangular waveform Range tp = 5 μs sine 10 Apk, TJ = 125 ...
