Document
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SD313
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general-purpose amplifier and switching applications.
Pinning
1 = Base 2 = Collector 3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PD PD TJ TSTG
60 60 5 3 2 30 +150 -55 to +150
Unit V V V A W W oC oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151 Φ(3.83)
.173(4.40) Typ
.055(1.39)
.045(1.15)
.625(15.87) .570(14.48)
123
.295(7.49) .220(5.58)
.350(8.90) .330(8.38)
.640 (16.25)
Typ
.055(1.40) .045(1.14) .037(0.95) .030(0.75)
.562(14.27) .500(12.70)
.100 (2.54)
Typ
.024(0.60) .014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature .