TIP122

SEMICONDUCTOR TECHNICAL DATA TIP122 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES ᴌHigh DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.) MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pules Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature VCBO VCEO VEB0 IC ICP IB PC Tj Storage Temperature Range Tstg RATING 100 100 5 5 8 0.12 65 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ E Q H A R S F B D T L CC MM K 123 J 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER O NG P DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 Φ3.60 +_ 0.20 3.00 6.70 MAX 13.60+_ 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 9.50+_ 0.20 8.00+_ 0.20 2.90 MAX TO-220AB EQUIVALENT CIRCUIT B C R1 = 8kΩ R2 = 120k...