VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 10 A
Base cathode
2
TO-220 FULL-PAK
1 Cathode
3 Anode
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IFSM trr
TJ max. Diode variation
Snap factor
TO-220FP 10 A
200 V, 400 V, 600 V 1.2 V 160 A 50 ns 150 °C
Single die 0.5
FEATURES • 150 °C max. operation junction temperature • Designed and qualified according to
JEDEC-JESD47 • Fully isolated package (VINS = 2500 VRMS) • UL E78996 approved • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21
defintion (-M3 only)
APPLICATIONS These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met.
DESCRIPTION
The VS-10ETF0..FP... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM IF(AV) IFSM trr VF TJ
Sinusoidal waveform
1 A, 100 A/µs 10 A, TJ = 25 °C
VALUES 200 to 600
10 150 50 1.2 - 40 to 150
UNITS V
A
ns V °C
VOLTAGE RATINGS
PART NUMBER
VS-10ETF02FPPbF, VS-10ETF02FP-M3 VS-10ETF04FPPbF, VS-10ETF04FP-M3 VS-10ETF06FPPbF, VS-10ETF06FP-M3
VRRM, MAXIMUM PEAK REVERSE VOLTAGE V
200
400
600
VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V
300
500
700
IRRM AT 150 °C
mA
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS TC = 98 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied
VALUES 10 150 160
112.5 160 1600
UNITS A
A2s A2s
Revision: 10-Jan-12
1
Document Number: 94089
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop Forward slope resistance Threshold voltage
VFM rt
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS 10 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C TJ = 150 °C
VR = Rated VRRM
VALUES 1.2 23.5 0.85 0.1 3.0
UNITS V
m V
mA
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 10 Apk 25 A/μs 25 °C
VALUES 145 2.75 0.32 0.6
UNITS ns A μC
IFM trr
dir
t
dt
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
TJ, TStg
Maximum thermal resistance junction to case
RthJC
DC operation
Maximum thermal resistance junction to ambient Typical thermal resistance, case to heatsink
RthJA RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum maximum
Marking device
Case style TO-220 FULL-PAK
VALUES - 40 to 150
UNITS °C
2.5
62
°C/W
0.5
2
g
0.07
oz.
6 (5) 12 (10)
kgf · cm (lbf · in)
10ETF02FP 10ETF04FP 10ETF06FP
Revision: 10-Jan-12
2
Document Number: 94089
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
150
10ETF.. Series
140
RthJC (DC) = 2.5 °C/W
130
Ø
120
Conduction angle
110
100
90
80 0
30° 60° 90° 120° 180°
2
4
6
8
10
12
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average Forward Power Loss (W)
20 10ETF.. Series
16 TJ = 150 °C
30° 12 RMS limit
90° 180°
60° 120°
DC
8
Ø
4
Conduction period
0
0
4
8
12
16
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
150
10ETF.. Series
140
RthJC (DC) = 2.5 °C/W
130
Ø
Conduction period
120
110
100
90 0
30° 60° 90° 120° 180°
DC
2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Peak Half Sine Wave Forward Current (A)
160
At any rated load condition and wit.