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VS-10ETF06FP-M3 Dataheets PDF



Part Number VS-10ETF06FP-M3
Manufacturers Vishay
Logo Vishay
Description Fast Soft Recovery Rectifier Diode
Datasheet VS-10ETF06FP-M3 DatasheetVS-10ETF06FP-M3 Datasheet (PDF)

VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A Base cathode 2 TO-220 FULL-PAK 1 Cathode 3 Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IFSM trr TJ max. Diode variation Snap factor TO-220FP 10 A 200 V, 400 V, 600 V 1.2 V 160 A 50 ns 150 °C Single die 0.5 FEATURES • 150 °C max. operation junction temperature • Designed and qualified according to JEDEC-JESD47 • Fully isolated package (VINS = 2500 VRMS) •.

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VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A Base cathode 2 TO-220 FULL-PAK 1 Cathode 3 Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IFSM trr TJ max. Diode variation Snap factor TO-220FP 10 A 200 V, 400 V, 600 V 1.2 V 160 A 50 ns 150 °C Single die 0.5 FEATURES • 150 °C max. operation junction temperature • Designed and qualified according to JEDEC-JESD47 • Fully isolated package (VINS = 2500 VRMS) • UL E78996 approved • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 defintion (-M3 only) APPLICATIONS These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION The VS-10ETF0..FP... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) IFSM trr VF TJ Sinusoidal waveform 1 A, 100 A/µs 10 A, TJ = 25 °C VALUES 200 to 600 10 150 50 1.2 - 40 to 150 UNITS V A ns V °C VOLTAGE RATINGS PART NUMBER VS-10ETF02FPPbF, VS-10ETF02FP-M3 VS-10ETF04FPPbF, VS-10ETF04FP-M3 VS-10ETF06FPPbF, VS-10ETF06FP-M3 VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 200 400 600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 300 500 700 IRRM AT 150 °C mA 2 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS TC = 98 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied VALUES 10 150 160 112.5 160 1600 UNITS A A2s A2s Revision: 10-Jan-12 1 Document Number: 94089 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance Threshold voltage VFM rt VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES 1.2 23.5 0.85 0.1 3.0 UNITS V m V mA RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS IF at 10 Apk 25 A/μs 25 °C VALUES 145 2.75 0.32 0.6 UNITS ns A μC IFM trr dir t dt Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance junction to case RthJC DC operation Maximum thermal resistance junction to ambient Typical thermal resistance, case to heatsink RthJA RthCS Mounting surface, smooth and greased Approximate weight Mounting torque minimum maximum Marking device Case style TO-220 FULL-PAK VALUES - 40 to 150 UNITS °C 2.5 62 °C/W 0.5 2 g 0.07 oz. 6 (5) 12 (10) kgf · cm (lbf · in) 10ETF02FP 10ETF04FP 10ETF06FP Revision: 10-Jan-12 2 Document Number: 94089 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series www.vishay.com Vishay Semiconductors Maximum Allowable Case Temperature (°C) 150 10ETF.. Series 140 RthJC (DC) = 2.5 °C/W 130 Ø 120 Conduction angle 110 100 90 80 0 30° 60° 90° 120° 180° 2 4 6 8 10 12 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Maximum Average Forward Power Loss (W) 20 10ETF.. Series 16 TJ = 150 °C 30° 12 RMS limit 90° 180° 60° 120° DC 8 Ø 4 Conduction period 0 0 4 8 12 16 Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics Maximum Allowable Case Temperature (°C) 150 10ETF.. Series 140 RthJC (DC) = 2.5 °C/W 130 Ø Conduction period 120 110 100 90 0 30° 60° 90° 120° 180° DC 2 4 6 8 10 12 14 16 18 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Peak Half Sine Wave Forward Current (A) 160 At any rated load condition and wit.


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