VE2045C-E3

www.vishay.com VE2045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TMBS ® TO-220AB VE2045C 3 2 1 PIN 1 PIN 3 PIN 2 CASE FEATURES Power pack Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A (TA = 125 °C) TJ max. Package 2 x 10 A 45 V 100 A 0.54 V 150 °C TO-220AB Diode variations Common cathode MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads...