NGTB40N65IHRWG
IGBT with Monolithic Reverse Conducting Diode
This Insulated Gate Bipolar Transistor (IGBT) features rob...
NGTB40N65IHRWG
IGBT with Monolithic Reverse Conducting Diode
This Insulated Gate Bipolar
Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications.
Features
Extremely Efficient Trench with Fieldstop Technology Low Conduction Design for Soft Switching Application Reduced Power Dissipation in Inducting Heating Application Reliable and Cost Effective Single Die Solution This is a Pb−Free Device
Typical Applications
Inductive Heating Air Conditioning PFC Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current @ TC = 25°C @ TC = 100°C
Pulsed collector current, tpulse limited by TJmax, 10 ms pulse, VGE = 15 V
Diode forward current @ TC ...