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NGTB45N60S2WG Dataheets PDF



Part Number NGTB45N60S2WG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description IGBT
Datasheet NGTB45N60S2WG DatasheetNGTB45N60S2WG Datasheet (PDF)

NGTB45N60S2WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features • Low Switching Loss Reduces System Power Dissipation • .

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NGTB45N60S2WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features • Low Switching Loss Reduces System Power Dissipation • TJmax = 175°C • Soft, Fast Free Wheeling Diode • This is a Pb−Free Device Typical Applications • Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 90 45 Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM 180 A IF A 90 45 Diode pulsed current, Tpulse limited by TJmax Gate−emitter voltage Transient Gate Emitter Voltage (tp =.


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