IGBT - Field Stop II
NGTB50N65FL2WG
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective F...
IGBT - Field Stop II
NGTB50N65FL2WG
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features
Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability This is a Pb−Free Device
Typical Applications
Solar Inverters Uninterruptible Power Supplies (UPS) Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter Voltage
Collector Current @ TC = 25°C @ TC = 100°C
Diode Forward Current @ TC = 25°C @ TC = 100°C
Diode Pulsed Current TPULSE Limited by TJ Max
Pulsed Collector Current, Tpulse Limited by TJmax
Short−circuit Withstand Time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C
Gate−emitter Voltage
Transient Gate−emitter Voltage (TPULSE = 5 ms, D < 0.10)
Power Dissipation @ TC = 25°C @ TC = 100°C
Operating Junction Temperature Range
VCES
650
V
IC
A
100
50
IF
A
100
50
IFM
200
A
ICM
200
A
tSC
5
ms
VGE
±20
V
±30
V
PD
W
417
208
TJ
−55 to +175 °C
Storage Temperature Range
Lead temperature for soldering, 1/8″ from case for 5 seconds
Tstg TSLD
−55 to +175 ...