NGTB50N60FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ...
NGTB50N60FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features
Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability This is a Pb−Free Device
Typical Applications
Solar Inverters Uninterruptible Power Supplies (UPS) Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current @ TC = 25°C @ TC = 100°C
VCES 600 V
IC A 100 50
Diode Forward Current @ TC = 25°C @ TC = 100°C
IF A 100
50
Diode...
