NGTG30N60FWG

NGTG30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation 5 ms Short−Circuit Capability These are Pb−Free Devices Typical Applications Power Factor Correction ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 60 30 Pulsed collector current, Tpulse limited by TJmax Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C Gate−emitter voltage Transient Gate Emitter Voltage (tp = 5 ms, D < 0.010) Power Dissipation @ TC = 25°C @ TC = 100°C ICM 120 A tSC 5 ms VGE $20 V $30 PD W 167 67 Operating junction temperature range TJ −55 to +150 °C Storage temperatu...