NGTG35N65FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ...
NGTG35N65FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications.
Features
Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices
Typical Applications
Solar Inverters Uninterruptible Power Supplies (UPS) Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current @ TC = 25°C @ TC = 100°C
VCES 650 V
IC A 70 35
Pulsed collector current, Tpulse limited by TJmax
Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C
Gate−emitter voltage
Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10)
Power Dissip...
