2SA1736

PNP Epitaxial Planar Silicon Transistor FEATURES z Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) Pb Lead-free z High speed switching time: tstg = 0.2 μs (typ.) z Complementary to 2SC4541 APPLICATIONS z High-Voltage Driver Applications Production specification 2SA1736 SOT-89 ORDERING INFORMATION Type No. Marking 2SA1736 LD Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base current PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.8t) Value -60 Units V -50 V -6 V -3 A -0.6 A 0.5 W 1 Note1 W -55 to +150 ℃ E125 Rev.A www.gmicroelec.com 1 Production specification PNP Epitaxial Planar Silicon Transistor 2SA1736 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MA...