BUW64A

isc Silicon NPN Power Transistors BUW64A/B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUW64A = 110V(Min)- BUW64B = 130V(Min)- BUW64C ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUW64A 140 VCEV Collector-Emitter Voltage VBE= -1.5V BUW64B 160 V BUW64C 180 BUW64A 90 VCEO(SUS) Collector-Emitter Voltage BUW64B 110 V BUW64C 130 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IC Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 2.5 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUW64A BUW64B BUW64C IC= 10mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage BUW64A/B IC= 5A; IB= 0.5A BUW64C IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A VBE(sat) ICBO IEBO ...