1. BASE
2. COLLECTOR
Features
3 2 1
3. EMITTER
Wide ASO (Adoption of MBIT process). Low saturation voltage. H...
1. BASE
2. COLLECTOR
Features
3 2 1
3. EMITTER
Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage.
2SB1274(
PNP)
TO-220
Transistor
TO-220
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value -60 -60 -6 -3 2 150
-55-150
Units V V V A W ℃ ℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC =-1mA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-5mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA, IC=0
Collector cut-off current
ICBO
VCB=-40V, IE=0
Emitter cut-off current
IEBO VEB=-4V, IC=0
DC current gain
hFE(1) hFE(2)
VCE=-5V, IC=-500mA...
