VS-6TQ035S-M3, VS-6TQ040S-M3, VS-6TQ045S-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier,...
VS-6TQ035S-M3, VS-6TQ040S-M3, VS-6TQ045S-M3
www.vishay.com
Vishay Semiconductors
High Performance
Schottky Rectifier, 6 A
Base cathode
2
2 1
3 D2PAK (TO-263AB)
1 N/C
3 Anode
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF IRM TJ max. EAS Package
6A 35 V, 40 V, 45 V
0.53 V 7 mA at 125 °C
175 °C 8 mJ D2PAK (TO-263AB)
Circuit configuration
Single
FEATURES
175 °C TJ operation High frequency operation
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
Designed and qualified according to JEDEC®-JESD 47
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION The VS-6TQ...
Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM
Rectangular waveform Range tp = 5 μs sine
VF
6 Apk, TJ = 125 °C
TJ
Range
VALUES 6
35 to 45 690 0.53
-55 to +175
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage Maximum working peak reverse voltage
VR VRWM
VS-6TQ035S-M3 35
VS-...
