VS-8TQ100S-M3

www.vishay.com VS-8TQ080S-M3, VS-8TQ100S-M3 Vishay Semiconductors High Performance Schottky Rectifier, 8 A Base cathode 2 D2PAK 1 N/C 3 Anode PRODUCT SUMMARY IF(AV) VR VF at IF IRM TJ max. EAS Package Diode variation 8A 80 V, 100 V 0.58 V 7 mA at 125 °C 175 °C 7.5 mJ TO-263AB (D2PAK) Single die FEATURES 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Designed and qualified according to JEDEC®-JESD 47 Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction tempe...