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PH2226-110M Dataheets PDF



Part Number PH2226-110M
Manufacturers MA-COM
Logo MA-COM
Description Radar Pulsed Power Transistor
Datasheet PH2226-110M DatasheetPH2226-110M Datasheet (PDF)

PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant M/A-COM Products Released, 22 Feb 08 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Co.

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PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant M/A-COM Products Released, 22 Feb 08 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 65 3.0 15 583 -65 to +200 200 Units V V A W °C °C Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Collector-Emitter Breakdown Voltage IC = 40mA Collector-Emitter Leakage Current VCE = 36V Thermal Resistance Vcc = 36V, Pin = 20W Output Power Vcc = 36V,.


NVC3S5A51PLZ PH2226-110M NVMFS6B03N


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