Document
PH2226-110M
Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty
Features
• NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant
M/A-COM Products Released, 22 Feb 08
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature
Symbol
VCES VEBO
IC PTOT TSTG
TJ
Rating
65 3.0 15 583 -65 to +200 200
Units
V V A W °C °C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage IC = 40mA
Collector-Emitter Leakage Current VCE = 36V
Thermal Resistance
Vcc = 36V, Pin = 20W
Output Power
Vcc = 36V,.