Document
NVMFS6B05N
Power MOSFET
100 V, 8.0 mW, 114 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6B05NWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1, 2, 3)
Power Dissipation RqJC (Notes 1, 2)
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1 & 2)
Pulsed Drain Current
TC = 25°C
Steady State
TC = 100°C
TC = 25°C TC = 100°C TA = 25°C
Steady State
TA = 100°C TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
PD
ID
PD
IDM TJ, Tstg
100 ±16 114
80
165 83 17
12
3.8 1.9 330 −55 to +.