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NVR5124PL

ON Semiconductor

Power MOSFET

NVR5124PL Power MOSFET −60 V, −1.1 A, 230 mW, Single P−Channel SOT−23 Package Features • Trench Technology • NVR Prefi...


ON Semiconductor

NVR5124PL

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NVR5124PL Power MOSFET −60 V, −1.1 A, 230 mW, Single P−Channel SOT−23 Package Features Trench Technology NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD IDM TJ, Tstg −60 ±20 −1.1 −0.67 −0.47 0.19 −2.5 −55 to +150 V V A W A °C Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS −0.6 A TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the devi...




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