Document
PH2729-110M
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Features
NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature
Symbol
VCES VEBO
IC PTOT TSTG
TJ
Rating
63 3.0 8.0 330 -65 to +200 200
Units
V V A W °C °C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage IC = 50mA
Collector-Emitter Leakage Current VCE = 36V
Thermal Resistance
Vcc = 36V, Pin = 23W
Output Power
Vcc = 36V, Pin = 23W
Power Gain
Vc.