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PH2729-130M Dataheets PDF



Part Number PH2729-130M
Manufacturers MA-COM
Logo MA-COM
Description Radar Pulsed Power Transistor
Datasheet PH2729-130M DatasheetPH2729-130M Datasheet (PDF)

PH2729-130M Radar Pulsed Power Transistor 130 W, 2.7—-2.9 GHz, 100 µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/ceramic package  RoHS compliant Outline Drawing Rev. V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage.

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PH2729-130M Radar Pulsed Power Transistor 130 W, 2.7—-2.9 GHz, 100 µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/ceramic package  RoHS compliant Outline Drawing Rev. V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 63 3.0 12.5 575 -65 to +200 200 Units V V A W °C °C Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Collector-Emitter Breakdown Voltage IC = 40mA Collector-Emitter Leakage Current Thermal Resistance VCE = 36V Vcc = 36V, Pout = 130W Input Power Vcc = 36V, Pout = 130W Power.


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