PH2856-160

PH2856-160 Radar Pulsed Power Transistor 160W, 2.856 GHz, 12µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/ceramic package  RoHS compliant Outline Drawing Rev. V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 65 3.0 15.0 700 -65 to +200 200 Units V V A W °C °C Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Collector-Emitter Breakdown Voltage IC = 40mA Collector-Emitter Leakage Current VCE = 36V Thermal Resistance Vcc = 40V, Pout = 160W Output Power Vcc = 40V, Pout = 160W Power Gain V...