PH2931-20M
Radar Pulsed Power Transistor 20W, 2.9-3.1 GHz, 100µs Pulse, 10% Duty
Features
NPN silicon microwave power ...
PH2931-20M
Radar Pulsed Power
Transistor 20W, 2.9-3.1 GHz, 100µs Pulse, 10% Duty
Features
NPN silicon microwave power
transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature
Symbol
VCES VEBO
IC PTOT TSTG
TJ
Rating
65 3.0 1.85 115 -65 to +200 200
Units
V V A W °C °C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage IC = 10mA
Collector-Emitter Leakage Current VCE = 40V
Thermal Resistance
Vcc = 36V, Pin = 3.0W
Output Power
Vcc = 36V, Pin = 3.0W
Power Gain
V...