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BZX83C18RL Dataheets PDF



Part Number BZX83C18RL
Manufacturers Motorola Inc
Logo Motorola  Inc
Description 500 mW DO-35 Glass Zener Voltage Regulator Diodes
Datasheet BZX83C18RL DatasheetBZX83C18RL Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA 500 mW DO-35 Glass Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP GENERAL DATA 500 mW DO-35 GLASS GLASS ZENER DIODES 500 MILLIWATTS 1.8–200 VOLTS 500 Milliwatt Hermetically Sealed Glass Silicon Zener Diodes Specification Features: • Complete Voltage Range — 1.8 to 200 Volts • DO-204AH Package — Smaller than Conventional DO-204AA Package • Double Slug Type Construction • Metallurgically Bonded Construction Mechanical Ch.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA 500 mW DO-35 Glass Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP GENERAL DATA 500 mW DO-35 GLASS GLASS ZENER DIODES 500 MILLIWATTS 1.8–200 VOLTS 500 Milliwatt Hermetically Sealed Glass Silicon Zener Diodes Specification Features: • Complete Voltage Range — 1.8 to 200 Volts • DO-204AH Package — Smaller than Conventional DO-204AA Package • Double Slug Type Construction • Metallurgically Bonded Construction Mechanical Characteristics: CASE: Double slug type, hermetically sealed glass MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from case for 10 seconds FINISH: All external surfaces are corrosion resistant with readily solderable leads POLARITY: Cathode indicated by color band. When operated in zener mode, cathode will be positive with respect to anode MOUNTING POSITION: Any WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Seoul, Korea MAXIMUM RATINGS (Motorola Devices)* Rating DC Power Dissipation and TL ≤ 75°C Lead Length = 3/8″ Derate above TL = 75°C Operating and Storage Temperature Range * Some part number series have lower JEDEC registered ratings. CASE 299 DO-204AH GLASS Symbol PD Value 500 4 Unit mW mW/°C °C TJ, Tstg – 65 to +200 PD , MAXIMUM POWER DISSIPATION (WATTS) 0.7 0.6 0.5 0.4 3/8” 3/8” HEAT SINKS 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 200 TL, LEAD TEMPERATURE (°C) Figure 1. Steady State Power Derating Motorola TVS/Zener Device Data 500 mW DO-35 Glass Data Sheet 6-97 GENERAL DATA — 500 mW DO-35 GLASS APPLICATION NOTE — ZENER VOLTAGE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: TL = θLAPD + TA. θLA is the lead-to-ambient thermal resistance (°C/W) and PD is the power dissipation. The value for θLA will vary and depends on the device mounting method. θLA is generally 30 to 40°C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + ∆TJL. ∆TJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for dc power: ∆TJL = θJLPD. For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ(∆TJ) may be estimated. Changes in voltage, VZ, can then be found from: ∆V = θVZTJ. θVZ, the zener voltage temperature coefficient, is found from Figures 4 and 5. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Surge limitations are given in Figure 7. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of Figure 7 be exceeded. θ JL , JUNCTION-TO-LEAD THERMAL RESISTANCE (°C/W) 500 400 L L 300 2.4–60 V 200 100 0 62–200 V 0 0.2 0.4 0.6 0.8 1 L, LEAD LENGTH TO HEAT SINK (INCH) Figure 2. Typical Thermal Resistance 1000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 3 4 5 6 7 8 9 10 11 12 13 14 15 +25°C TYPICAL LEAKAGE CURRENT AT 80% OF NOMINAL BREAKDOWN VOLTAGE I R , LEAKAGE CURRENT ( µ A) +125°C VZ, NOMINAL ZENER VOLTAGE (VOLTS) Figure 3. Typical Leakage Current 500 mW DO-35 Glass Data Sheet 6-98 Motorola TVS/Zener Device Data GENERAL DATA — 500 mW DO-35 GLASS TEMPERATURE COEFFICIENTS (–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.) θ VZ , TEMPERATURE COEFFICIENT (mV/ °C) +12 +10 +8 +6 +4 +2 RANGE 0 –2 –4 2 3 4 5 6 7 8 9 VZ, ZENER VOLTAGE (VOLTS) 10 11 12 VZ @ IZT (NOTE 2) θ VZ , TEMPERATURE COEFFICIENT (mV/ °C) 100 70 50 30 20 10 7 5 3 2 1 10 RANGE VZ @ IZ (NOTE 2) 20 30 50 VZ, ZENER VOLTAGE (VOLTS) 70 100 Figure 4a. Range for Units to 12 Volts Figure 4b. Range for Units 12 to 100 Volts θ VZ , TEMPERATURE COEFFICIENT (mV/ °C) θ VZ , TEMPERATURE COEFFICIENT (mV/ °C) 200 180 160 +6 +4 +2 20 mA 0 0.01 mA –2 –4 3 4 1 mA NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS NOTE: CHANGES IN ZENER CURRENT DO NOT NOTE: AFFECT TEMPERATURE COEFFICIENTS 5 6 7 8 VZ @ IZ TA = 25°C 140 VZ @ IZT (NOTE 2) 120 100 120 130 140 150 160 170 180 190 200 VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOL.


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